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EDRAM
From Wikipedia, the free encyclopedia
- The correct title of this article is eDRAM. The initial letter is shown capitalized due to technical restrictions.
| Memory types |
| Volatile |
| Non-Volatile |
eDRAM stands for "embedded DRAM", a capacitor-based dynamic random access memory usually integrated on the same die or in the same package as the main ASIC or processor, as opposed to external DRAM modules and transistor-based SRAM typically used for caches.
Embedding permits much wider buses and higher operation speeds, and due to much higher density of DRAM in comparison to SRAM, larger amounts of memory can potentially be used. However, the difference in manufacturing processes make on-die integration difficult, so several dies have to be packaged in one chip, raising costs. The latest developments overcome this limitation by using standard CMOS process to manufacture eDRAM, as in 1T-SRAM.
eDRAM is used in many game consoles, including Sony PS2 and PlayStation Portable, Nintendo Wii and GameCube, and Microsoft Xbox 360.
Both the Cell CPU used in the PlayStation 3 and the IBM POWER CPUs will utilize eDRAM for L2 cache, likely in IBM's 45 nm process node.
- http://www.cs.unc.edu/~jp/DRAM.pdf
- http://www.eetimes.com/story/OEG20030414S0040
- http://www.necelam.com/edram90/
- http://www.findarticles.com/p/articles/mi_qa3751/is_200501/ai_n9521086
- http://arstechnica.com/news.ars/post/20070214-8842.html
- IBM eDram - Accessed Feb 17, 2007
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