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The quantum cascade laser or QC laser is a unipolar semiconductor laser. Unlike conventional semiconductor lasers, the optical transitions occur between electric subbands rather than between the conduction band and valence bands. The "cascade" is a series of equal energy steps built into the material matrix while the crystal is being grown. When the electrons are transmitted through the laser crystal, they emit one photon at each of these cascade steps, unlike diode lasers which only emit one photon per electron transmitted.

The concept was first explored in the paper "Possibility of amplification of electromagnetic waves in a semiconductor with a superlattice" by R.F. Kazarinov and R.A. Suris.^[1]

The laser was invented and demonstrated by Jerome Faist, Federico Capasso, Deborah Sivco, Carlo Sirtori, Albert Hutchinson, and Alfred Cho at Bell Laboratories in 1994.^[2]

Contents 1 Fabrication 2 Intersubband Transitions 3 Advantages 4 References 5 External links

It consists of alternating layers of two different semiconductors for example GaAs/AlGaAs or AlInAs/InGaAs forming a quantum heterostructure. The layers are grown on a substrate using a process called molecular beam epitaxy, or metal-organic vapour phase epitaxy (MO-CVD). The emitted wavelength of the laser is determined primarily by the thickness of the crystal layers and the layer materials itself. This is a great advantage over diode lasers, whose wavelengths depend primarily on the band gap of the given material and is therefore restricted. The wavelengths that are available to quantum cascade lasers are therefore diverse, giving emission in the range of 3.5 - 160µm covering the mid-infrared range. In 1996,the laser still had one fatal flaw: a messy, broad-spectrum beam. Then post-doc Bell Labs researcher Claire Gmachl fixed this problem by sculpting the laser crystal into an echo chamber for photons thus amplifying one particular portion of the beam. Often a structure called distributed feedback (DFB) is built on top of the laser crystal to prevent it from emitting at other than the desired wavelength. In addition this can also be used to retrieve TM polarized light instead of only TE polarized light from the front facet.

Within a bulk semiconductor crystal, electrons may occupy states in one of two continuous energy bands - the valence band, which is heavily populated with low energy electrons and the conduction band, which is sparsely populated with high energy electrons. The two energy bands are separated by an energy bandgap in which there are no permitted states available for electrons to occupy.

Conventional semiconductor lasers rely on a single photon of light being emitted when a high energy electron from the conduction band "falls" into an unoccupied hole in the valence band. The wavelength of light emitted is therefore strongly dependent upon the energy bandgap of the laser material.

The quantum cascade laser however does not use bulk semiconductor materials in its optically active region. Instead, it consists of a periodic series of thin layers of varying material composition. The varying composition introduces a varying electric potential across the length of the device, meaning that there is a varying probability of electrons occupying different positions over the length of the device. This is referred to as one-dimensional multiple quantum well confinement and leads to the splitting of the band of permitted energies into a number of electric subbands. For any given energy, an electron may occupy a number of different subbands, each with a different momentum.

By careful selection of material composition and thickness of each layer in the device, and the applied external electric field, an electric subband minimum in a given period of the device may be aligned with a higher energy subband minimum in the adjacent period. Therefore, an electron may take part in an optical transition between electric subbands in a given period before tunneling into the next period of the structure and performing another optical transition. This process may occur dozens of times for each electron moving through the device, giving high optical power output.

The laser's high optical power output, tuning range and room temperature operation make it useful for spectroscopic applications like the remote sensing of environmental gases and pollutants in the atmosphere. It may eventually be used for vehicular cruise control in conditions of poor visibility, collision avoidance radar, industrial process control, and medical diagnostics such as breath analyzers. The independence of laser operation from the conduction and valence band edge characteristics allows much greater flexibility of emission wavelengths from conventional semiconductor materials such as the GaAs/AlGaAs material system. Furthermore, laser operation from indirect bandgap materials such as the Si/SiGe material system is theoretically possible.^[3]

1. ^ Kazarinov, R.F; Suris, R.A. (April 1971). "Possibility of amplification of electromagnetic waves in a semiconductor with a superlattice". Fizika i Tekhnika Poluprovodnikov 5 (4): 797-800. 
2. ^ Faist, Jerome; Federico Capasso, Deborah L. Sivco, Carlo Sirtori, Albert L. Hutchinson, and Alfred Y. Cho (April 1994). "Quantum Cascade Laser". Science 264 (5158): 553-556. DOI:10.1126/science.264.5158.553. Retrieved on 2007-02-18. 
3. ^ Paul, Douglas J (2004). "[1]". Semicond. Sci. Technol. 19: R75-R108. DOI:10.1088/0268-1242/19/10/R02. Retrieved on 2007-02-18. 

• Bell Labs summary
  • Bell Labs technical information
• PhysicsWeb: Quantum Cascade Lasers
• Walter Schottky Institute explanation, with diagrams