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RRAM
From Wikipedia, the free encyclopedia
 |
This article contains information about a scheduled or expected future product. It may contain preliminary or speculative information, and may not reflect the final version of the product. |
| Memory types |
| Volatile |
| Non-Volatile |
RRAM or Resistive Random Access Memory is a new non-volatile memory type being developed by Sharp, Samsung, Fujitsu, Spansion, Macronix, Winbond and other companies.
Not much is known about this technology at the moment but according to Sharp it will be up to 100 times faster than current Flash memory.[1] Additionally, more details can be found in U.S. patent filing number 6946702, which claims to cover "Resistance random access memory", possibly the same, or a related, technology.[2]
Different forms of RRAM have been disclosed, based on different dielectric materials, spanning from perovskites to transition metal oxides to chalcogenides. Even silicon dioxide has been shown to exhibit resistive switching as early as 1967.[3]
The basic idea is that a dielectric, which is normally insulating, can be made to conduct through a filament or conduction path formed after application of a sufficiently high voltage. The conduction path formation can arise from different mechanisms, including defects, metal migration, etc. Once the filament is formed, it may be reset (broken, resulting in high resistance) or set (re-formed, resulting in lower resistance) by an appropriately applied voltage.
- ^ Sharp Develops Basic Technology for RRAM, Next-Generation Nonvolatile Memory
- ^ Resistance random access memory - Google Patents
- ^ D. R. Lamb and P. C. Rundle, "A non-filamentary switching action in thermally grown silicon dioxide films", Br. J. Appl. Phys. 18, 29-32 (1967)