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Zinc telluride
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| Zinc telluride | |
|---|---|
| Image:Zinc telluride.jpg | |
| General | |
| Other names | |
| Molecular formula | ZnTe |
| Molar mass | 192.99 g/mol |
| Appearance | red crystals |
| Crystal structure | cubic |
| CAS number | [1315-11-3] |
| Properties | |
| Density and phase | 6.34 g/cm3, solid |
| Solubility | decomposes in water |
| Melting point | 1238.5°C |
| Boiling point | |
| Enthalpy | 10980 J.mol−1 |
| Band gap | 2.24 eV |
| Lattice constant | 0.61034 nm |
| Hazards | |
| EU classification | not listed |
| NFPA 704 | |
| Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) Infobox disclaimer and references |
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Zinc telluride (ZnTe) is an intrinsic semiconductor material with band gap of 2.23-2.25 eV. It is usually a P-type semiconductor. Its crystal structure is cubic, of sphalerite.
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Its lattice constant is 0.61034 nm, allowing it to be grown with or on aluminium antimonide, gallium antimonide, indium arsenide, and lead selenide. The CAS number of ZnTe is []. It has the appearance of grey or brownish-red powder, or ruby-red crystals when refined by sublimation. Zinc telluride can be also prepared as hexagonal crystals. Irradiated by a strong optical beam burns in presence of oxygen.
Zinc telluride is important for development of various semiconductor devices, including blue LEDs, laser diodes, solar cells, microwave parts, etc.
It can be used for solar cells as a background layer and the P-type semiconductor in PIN structure (e.g. using cadmium telluride -- N-type semiconductor, and cadmium sulphide -- I-type semiconductor).
Zinc telluride together with lithium niobate is often used for generation of pulsed terahertz radiation in time-domain terahertz spectroscopy and terahertz imaging. When a crystal of such material is subjected to a high-intensity light pulse of subpicosecond duration, it emits a pulse of terahertz frequency through a nonlinear optical process. Conversely, subjecting a zinc telluride crystal to terahertz radiation causes it to show optical birefringence and change the polarization of a transmitting light, making it a detector.
Zinc telluride can be very easily doped and therefore it's one of the most common semiconducting materials used in optoelectronics.
Vanadium doped zinc telluride (ZnTe:V) is a non-linear optical photorefractive material with possible use to protect sensors at visible wavelengths. ZnTe:V optical limiters are light and compact, without complicated optics of conventional limiters. ZnTe:V can block a high-intensity jamming beam from a laser dazzler, while still passing the lower-intensity image of the observed scene. It can also be used in holographic interferometry, in reconfigurable optical interconnections, and in laser optical phase conjugation devices. It offers superior photorefractive performance at wavelengths between 600-1300 nm, in comparison with other III-V and II-VI compound semiconductors. By adding manganese as an additional dopant (ZnTe:V:Mn), its photorefractive yield can be significantly increased.
- National Compound Semiconductor Roadmap (Office of Naval research) - Accessed April 2006